MODELING OF UNIFORM AND PAIR-INDUCED UP-CONVERSION MECHANISMS IN HIGH-CONCENTRATION ERBIUM-DOPED SILICA WAVE-GUIDES

被引:46
作者
DIPASQUALE, F
FEDERIGHI, M
机构
[1] UNIV PARMA, DIPARTIMENTO INGN INFORMAZ, I-43100 PARMA, ITALY
[2] UCL, DEPT ELECTR & ELECT ENGN, LONDON WC1E 7JE, ENGLAND
关键词
D O I
10.1109/50.464735
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Effects of high concentration and clustering on the performance of erbium-doped silica waveguide amplifiers are numerically investigated. The model, based on propagation-rate equations of a laser system containing isolated ions and ion-pairs, is numerically solved by combining Runge-gutta and full-vectorial finite-element methods; it allows the description of both uniform and pair-induced upconversion mechanisms. Numerical results show that cooperative upconversion processes seriously deteriorate amplifier performance at high erbium concentration. Moreover, we show that only the detrimental effect due to uniform upconversion can be reduced by a careful design bf waveguide geometry and refractive index profile; performance degradation due to clustering may only be overcome by reducing the fraction of ions in pair using suitable codopants. The proposed model is validated with published experimental results.
引用
收藏
页码:1858 / 1864
页数:7
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