INGAASP-INP MUSHROOM STRIPE LASERS WITH LOW CW THRESHOLD AND HIGH OUTPUT POWER

被引：10

作者：

BURKHARD, H

KUPHAL, E

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 11期

关键词：

D O I：

10.1143/JJAP.22.L721

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L721 / L723

页数：3

共 6 条

[1] LOW THRESHOLD CW OPERATION GAINASP INP MUSHROOM STRIPE LASER (MSL) EMITTING AT 1.27-MU-M
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[2] INGAASP/INP UNDERCUT MESA LASER WITH PLANAR POLYIMIDE PASSIVATION
KOREN, U
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MARGALIT, S
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 403 - 405
[3] KUPHAL E, 1983, 2ND P NATO WORKSH MA, P41
[4] A NOVEL TECHNIQUE FOR GALNASP/INP BURIED HETEROSTRUCTURE LASER FABRICATION
LIAU, ZL
WALPOLE, JN
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 568 - 570
[5] Nickel H., 1983, Journal of Optical Communications, V4, P63, DOI 10.1515/JOC.1983.4.2.63
[6] LOW-THRESHOLD CURRENT CW OPERATION OF MULTIPLE INFIL BURIED HETEROSTRUCTURE 1.3 MU-M GAINASP LASERS
PLASTOW, R
HARDING, M
GRIFFITH, I
CARTER, AC
GOODFELLOW, RC
[J]. ELECTRONICS LETTERS, 1982, 18 (06) : 262 - 263