COMPOSITION DEPENDENCE OF ALXGA1-XSB ENERGY GAPS

被引:28
作者
BEDAIR, SM [1 ]
机构
[1] CARNEGIE MELLON UNIV,DEPT ELECT ENGN,PITTSBURGH,PA 15213
关键词
D O I
10.1063/1.323276
中图分类号
O59 [应用物理学];
学科分类号
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页码:4145 / 4147
页数:3
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共 14 条
[1]   ENERGY BAND STRUCTURE OF GALLIUM ANTIMONIDE [J].
BECKER, WM ;
FAN, HY ;
RAMDAS, AK .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2094-&
[2]   GROWTH AND CHARACTERIZATION OF ALXGA1-XSB [J].
BEDAIR, SM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) :1150-1152
[3]  
BURDIYAN II, 1960, SOV PHYS-SOL STATE, V1, P1246
[4]   COMPOSITION DEPENDENCE OF GA1-XALXAS DIRECT AND INDIRECT ENERGY GAPS [J].
CASEY, HC ;
PANISH, MB .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) :4910-&
[5]  
COLBY IW, 1968, ADV XRAY ANAL, V77, P287
[6]   EFFECT OF PRESSURE ON ABSORPTION EDGES OF SOME III-V, II-VI, AND I-VII COMPOUNDS [J].
EDWARDS, AL ;
DRICKAMER, HG .
PHYSICAL REVIEW, 1961, 122 (04) :1149-&
[7]   BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J].
EHRENREICH, H .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2155-&
[8]  
MEAD CA, 1963, PHYS REV LETT, V11, P385
[9]  
Milnes A. G., 1972, HETEROJUNCTION METAL
[10]   EXPERIMENTAL INVESTIGATION OF CONDUCTION BAND OF GASB [J].
SAGAR, A .
PHYSICAL REVIEW, 1960, 117 (01) :93-100