THE EFFECTS OF TRANSIENT RADIATION ON GAAS SCHOTTKY DIODE FET LOGIC-CIRCUITS

被引：4

作者：

WALTON, ER

ANDERSON, WT

ZUCCA, R

NOTTHOFF, JK

机构：

[1] USN, RES LAB, WASHINGTON, DC 20375 USA

[2] MCDONNELL DOUGLAS ASTRONAUT CO, HUNTINGTON BEACH, CA 92647 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/TNS.1983.4333104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4178 / 4182

页数：5

共 7 条

[1] LONG-TERM TRANSIENT RADIATION-RESISTANT GAAS-FETS [J].

ANDERSON, WT ;

SIMONS, M ;

KING, EE ;

DIETRICH, HB ;

LAMBERT, RJ .

ELECTRON DEVICE LETTERS, 1982, 3 (09) :248-250

[2] PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC [J].

EDEN, RC ;

WELCH, BM ;

ZUCCA, R ;

LONG, SI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :299-317

[3] SATURATED RESISTOR LOAD FOR GAAS INTEGRATED-CIRCUITS [J].

LEE, CP ;

WELCH, BM ;

ZUCCA, R .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) :1007-1013

[4] GAAS-MESFETS WITH PARTIAL P-TYPE DRAIN REGIONS [J].

LEE, CP ;

WELCH, BM .

ELECTRON DEVICE LETTERS, 1982, 3 (07) :200-202

[5] PULSED IONIZING-RADIATION RECOVERY CHARACTERISTICS OF MSI GAAS INTEGRATED-CIRCUITS [J].

LONG, SI ;

LEE, FS ;

PELLEGRINI, P .

ELECTRON DEVICE LETTERS, 1981, 2 (07) :173-176

[6] LSI PROCESSING TECHNOLOGY FOR PLANAR GAAS INTEGRATED-CIRCUITS [J].

WELCH, BM ;

SHEN, Y ;

ZUCCA, R ;

EDEN, RC ;

LONG, SI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1116-1124

[7]

ZULEEG R, 1982, GAAS IC S NEW ORLEAN

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