RADIATIVE RECOMBINATION AT DANGLING BONDS IN A-SI-H

被引：19

作者：

WILSON, BA ^{[1
]}

SERGENT, AM ^{[1
]}

HARBISON, JP ^{[1
]}

机构：

[1] BELL COMMUN RES INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1984年 / 30卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.30.2282

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2282 / 2285

页数：4

共 19 条

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[7] DEFECTS IN BOMBARDED AMORPHOUS-SILICON
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[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 40 (06): : 451 - 464
[8] LUMINESCENCE AND RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON
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