ELECTRONIC CONTRIBUTION TO THE THERMAL-CONDUCTIVITY OF NARROW-BAND GAP SEMICONDUCTORS - EFFECT OF NON-PARABOLICITY OF BANDS

被引：20

作者：

BHANDARI, CM ^{[1
]}

ROWE, DM ^{[1
]}

机构：

[1] UWIST,DEPT PHYS ELECTR & ELECT ENGN,CARDIFF CF1 3NU,S GLAM,WALES

来源：

关键词：

D O I：

10.1088/0022-3727/18/5/011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：873 / 884

页数：12

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