MIS STRUCTURE GAAS-GE3N4AL

被引：26

作者：

BAGRATISHVILL, GD ^{[1
]}

DZHANELIDZE, RB ^{[1
]}

KURDIANI, NI ^{[1
]}

SAKSAGANSKII, OV ^{[1
]}

机构：

[1] ACAD SCI GESSR, CYBERNETICS INST, TBILISI, GEORGIA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1976年 / 36卷 / 01期

关键词：

D O I：

10.1002/pssa.2210360107

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：73 / 79

页数：7

共 8 条

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KUHN, M
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 873 - +
[4] PHASE EQUILIBRIA IN GAAS AND GAP SYSTEMS
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (05) : 785 - &
[5] TSUJUDE T, 1972, JPN J APPL PHYS, V11, P1
[6] WALLMARK JT, 1969, RCA REV, V30, P330
[7] ZERBST, 1966, Z ANGEW PHYS, V22, P1
[8] SURFACE LUMINESCENCE IN GAAS AT LASER EXCITATION
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LITOVCHENKO, VG
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KORBUTYAK, DV
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 17 (01): : 353 - 358