ELECTRICAL-PROPERTIES OF STRONTIUM-TITANATE THIN-FILMS BY MULTIION-BEAM REACTIVE SPUTTERING TECHNIQUE

被引：37

作者：

PENG, CJ ^{[1
]}

HU, H ^{[1
]}

KRUPANIDHI, SB ^{[1
]}

机构：

[1] IND TECHNOL RES INST,MAT RES LABS,HSINCHU,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 08期

关键词：

D O I：

10.1063/1.109827

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of SrTiO3 were deposited by multi-ion-beam reactive sputtering technique using SrO and Ti-metal targets. The dielectric behavior of the films deposited on Pt-coated Si substrates showed thickness dependence. A dielectric constant of 219 at 100 KHz was found for 1.2 mum thick films. A charge storage density of about 15 fC/mum2 and leakage current density of 106 muA/cm2 at an electric field of 0.17 MV/cm were obtained for 0.3 mum films. The probable interface layers present between film and silicon substrate, in the case of metal-insulator-silicon configuration, appear to influence the electrical behavior. Preliminary analysis showed that the conduction of the films in high field region was bulk-limited Poole-Frenkel emission mechanisms.

引用

页码：1038 / 1040

页数：3

共 11 条

[1] BURFOOT JC, 1970, JPN J APPL PHYS S, V28, P417
[2] CHOPRA KL, 1969, THIN FILM PHENOMENA, P189
[3] DIELECTRIC-PROPERTIES OF ELECTRON-BEAM EVAPORATED SAMARIUM OXIDE-FILMS
JAYARAJ, MK
VALLABHAN, CPG
[J]. THIN SOLID FILMS, 1991, 197 (1-2) : 15 - 19
[4] KURPANIDHI SB, 1992, J APPL PHYS, V71, P376
[5] SOME ELECTRICAL PROPERTIES OF STRONTIUM TITANATE
LINZ, A
[J]. PHYSICAL REVIEW, 1953, 91 (03): : 753 - 754
[6] MATSUBARA S, 1990, MATER RES SOC SYMP P, V200, P243, DOI 10.1557/PROC-200-243
[7] PARKER LH, 1990, IEEE CIRCUITS DEVICE, P17
[8] PINIZZOTTO RF, 1991, UNPUB MATERIALS RES
[9] SZE SM, 1985, SEMICONDUCTOR DEVICE, P194
[10] YAMAMICHI S, 1991, JPN J APPL PHYS, V30, P3193

← 1 2 →