STRUCTURE AND FORMATION KINETICS OF OXYGEN-INDUCED RECOMBINATION CENTERS IN HEAT-TREATED SILICON

被引：7

作者：

GLINCHUK, KD

LITOVCHENKO, NM

SALNIK, ZA

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 71卷 / 01期

关键词：

D O I：

10.1002/pssa.2210710110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：83 / 87

页数：5

共 23 条

[1] SILICON FOR ELECTRONIC DEVICES [J].

BRADSHAW, SE ;

GOORISSEN, J .

JOURNAL OF CRYSTAL GROWTH, 1980, 48 (04) :514-529

[2] INFLUENCE OF OXYGEN ON SILICON RESISTIVITY [J].

CAZCARRA, V ;

ZUNINO, P .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4206-4211

[3] ON THE OUT-DIFFUSION OF OXYGEN FROM SILICON [J].

GAWORZEWSKI, P ;

RITTER, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 67 (02) :511-516

[4] ELECTRICAL-ACTIVITY OF OXYGEN IN SILICON [J].

GAWORZEWSKI, P ;

SCHMALZ, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (02) :699-707

[5] ON THE KINETICS OF THERMAL DONORS IN OXYGEN-RICH SILICON IN THE RANGE FROM 450-DEGREES-C TO 900-DEGREES-C [J].

GAWORZEWSKI, P ;

SCHMALZ, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (02) :K223-K226

[6]

GAWORZEWSKI P, 1981, PHYS STAT SOL A, V64, P151

[7] DECAY OF EXCESS CARRIERS IN THERMALLY TREATED OXYGEN-DOPED SILICON [J].

GLINCHUK, KD ;

LITOVCHENKO, NM .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (02) :549-555

[8]

GLINCHUK KD, 1979, FIZ TECHN POLUPROVOD, V13, P1927

[9] DETERMINATION OF PARTS PER BILLION OXYGEN IN SILICON THROUGH CALIBRATION OF IR-ABSORPTION AT 77 DEGREES KELVIN [J].

GRAFF, K ;

GRALLATH, E ;

ADES, S ;

GOLDBACH, G ;

TOLG, G .

SOLID-STATE ELECTRONICS, 1973, 16 (08) :887-893

[10] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].

KAISER, W ;

FRISCH, HL ;

REISS, H .

PHYSICAL REVIEW, 1958, 112 (05) :1546-1554

← 1 2 3 →