BARRIERS AT EVAPORATED METAL-POLYCRYSTALLINE CDS INTERFACES - (PHOTOEMISSION - FILMS - CAPACITANCE - OHMIC CONTACTS - E)

被引：6

作者：

LEARN, AJ

SCOTTMON.JA

SPRIGGS, RS

机构：

来源：

APPLIED PHYSICS LETTERS | 1966年 / 8卷 / 06期

关键词：

D O I：

10.1063/1.1754527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：144 / &

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[1] ELECTRICAL TRANSPORT AND CONTACT PROPERTIES OF LOW RESISTIVITY N-TYPE ZINC SULFIDE CRYSTALS (HALL EFFECT - BARRIER HEIGHT - WORK FUNCTION - N-TYPE CONDUCTIVITY - E)
AVEN, M
MEAD, CA
[J]. APPLIED PHYSICS LETTERS, 1965, 7 (01) : 8 - &
[2] PHOTOVOLTAIC EFFECTS AT RECTIFYING JUNCTIONS TO DEPOSITED CDS FILMS
BUJATTI, M
MULLER, RS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (07) : 702 - &
[3] RECTIFICATION AND SPACE-CHARGE-LIMITED CURRENTS IN CDS FILMS
DRESNER, J
SHALLCROSS, FV
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (JUL-A) : 205 - &
[4] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM
GOODMAN, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &
[5] EVAPORATED METALLIC CONTACTS TO CONDUCTING CADMIUM SULFIDE SINGLE CRYSTALS
GOODMAN, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 573 - &
[6] HUGHES AL, 1932, PHOTOELECTRIC PHENOM, P241
[7] SURFACE STATES ON SEMICONDUCTOR CRYSTALS - BARRIERS ON CD(SE-S) SYSTEM
MEAD, CA
[J]. APPLIED PHYSICS LETTERS, 1965, 6 (06) : 103 - &
[8] PHOTOEMISSION FROM AU AND CU INTO CDS
MEAD, CA
SPITZER, WG
[J]. APPLIED PHYSICS LETTERS, 1963, 2 (04) : 74 - 75
[9] BEHAVIOR OF CDS THIN FILM TRANSISTORS
MIKSIC, MG
SCHLIG, ES
HAERING, RR
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (01) : 39 - &
[10] NENISCH HK, 1957, RECTIFYING SEMICONDU, pCH7