X-RAY-INDUCED DAMAGE STUDIES IN SIC X-RAY-LITHOGRAPHY MASK MEMBRANES

被引：1

作者：

REDAELLI, R

PIANETTA, P

ROUSSEAUX, F

HAGHIRIGOSNET, AM

KEBABI, B

MADOURI, A

机构：

[1] Progetto Finalizzato Materiali e Dispositivi per l'Elettronica a Stato Solido Facolta' di Ingegneria, Universita' di Roma-Tor Vergata

[2] Stanford Synchrotron Radiation Laboratory, Stanford

[3] Laboratoire de Microstructure et de Microelectronique, CNRS, 92220 Bagneux

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90089-V

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a simple cantilever method we used to characterize the stability of candidate mask substrate materials during exposure to X-rays. By monitoring the curvature of a cantilever beam of the film of interest on a silicon wafer we can calculate the stress or volume changes in the film when exposed to X-rays. These measurements can be used to gauge the relative merits of different materials for use in X-ray masks. Examples are provided on measurements we have made on the stress change in boron nitride, silicon carbide and diamond films.

引用

页码：263 / 266

页数：4

共 7 条

[1]

King, Pan, Pianetta, Shimkunas, Mauger, Seligson, Radiation damage in boron nitride x-ray lithography masks, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 6, (1988)

[2]

Johnson, Levy, Resnick, Saunders, Yanof, Betz, Huber, Oertel, Radiation damage effects in boron nitride mask membranes subjected to x-ray exposures, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 5, (1987)

[3]

Rousseaux, Haghiri-Gosnet, Malek, Kebabi, Launois, Microelectronic Engineering, 11, (1990)

[4]

Stoney, Proc. R. Soc. London Ser., 87 A, (1909)

[5]

Luthje, Matthiessen, Harms, Bruns, SPIE, 773, (1987)

[6]

Madouri, Gosnet, Bourneix, Microelectronic Engineering, 6, (1987)

[7]

Kobayashi, Sugawara, Yamashiro, Yamaguchi, Microelectronic Engineering, 11, (1990)

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