SCANNING TUNNELLING MICROSCOPY STUDIES OF HETEROEPITAXY - CAF2 ON SI(111)

被引：11

作者：

WOLKOW, R

AVOURIS, P

机构：

来源：

JOURNAL OF MICROSCOPY-OXFORD | 1988年 / 152卷

关键词：

D O I：

10.1111/j.1365-2818.1988.tb01375.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：167 / 173

页数：7

共 6 条

[1] EVIDENCE FOR THE INFLUENCE OF INTERFACIAL ATOMIC-STRUCTURE ON ELECTRICAL-PROPERTIES AT THE EPITAXIAL CAF2/SI(111) INTERFACE [J].

BATSTONE, JL ;

PHILLIPS, JM ;

HUNKE, EC .

PHYSICAL REVIEW LETTERS, 1988, 60 (14) :1394-1397

[2] STRUCTURE AND BONDING AT THE CAF2/SI (111) INTERFACE [J].

HIMPSEL, FJ ;

HILLEBRECHT, FU ;

HUGHES, G ;

JORDAN, JL ;

KARLSSON, UO ;

MCFEELY, FR ;

MORAR, JF ;

RIEGER, D .

APPLIED PHYSICS LETTERS, 1986, 48 (09) :596-598

[3] INITIAL FORMATION OF THE INTERFACE BETWEEN A POLAR INSULATOR AND A NONPOLAR SEMICONDUCTOR - CAF2 ON SI(111) [J].

OLMSTEAD, MA ;

UHRBERG, RIG ;

BRINGANS, RD ;

BACHRACH, RZ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1123-1127

[4] ELECTRONIC-STRUCTURE OF THE CAF2/SI(111) INTERFACE [J].

RIEGER, D ;

HIMPSEL, FJ ;

KARLSSON, UO ;

MCFEELY, FR ;

MORAR, JF ;

YARMOFF, JA .

PHYSICAL REVIEW B, 1986, 34 (10) :7295-7306

[5]

TROMP RM, 1988, IN PRESS PHYS REV LE

[6] ATOM-RESOLVED SURFACE-CHEMISTRY USING SCANNING TUNNELING MICROSCOPY [J].

WOLKOW, R ;

AVOURIS, P .

PHYSICAL REVIEW LETTERS, 1988, 60 (11) :1049-1052

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