SPUTTER-DEPOSITION OF FE FILMS IN A HIGH-PRESSURE ATMOSPHERE

被引：4

作者：

ISHII, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1987年 / 26卷 / 06期

关键词：

ARGON - PRESSURE EFFECTS - SPUTTERING;

D O I：

10.1143/JJAP.26.L932

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A sputtering apparatus in which sputtered atoms were carried from the target to the substrate by Ar gas flowing between them was developed by the author. Using it, iron films were deposited at a considerably high rate in a very high pressure atmosphere, and sputtered atoms could be completely thermalized before arriving at the substrate.

引用

页码：L932 / L934

页数：3