PROPOSED GAAS-AL-GAAS METAL BASE TRANSISTOR

被引：4

作者：

CHEN, ZH ^{[1
]}

SMITH, JS ^{[1
]}

MARGALIT, S ^{[1
]}

YARIV, A ^{[1
]}

CHIU, LC ^{[1
]}

机构：

[1] INT TEL & TELEGRAPH, CTR ADV TECHNOL, SHELTON, CT 06484 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1984年 / 23卷 / 04期

关键词：

D O I：

10.1143/JJAP.23.L238

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L238 / L240

页数：3

共 12 条

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