MOLECULAR-BEAM EPITAXY OF PARA-TYPE MODULATION DOPED GAAS AND APPLICATION TO PARA-CHANNEL FIELD-EFFECT TRANSISTORS

被引：2

作者：

GOSSARD, AC

WIEGMANN, W

STORMER, HL

BALDWIN, K

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583185

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：584 / 584

页数：1

共 8 条

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[2] P-CHANNEL (AL,GA)AS/GAAS MODULATION-DOPED LOGIC GATES
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[3] ENERGY-GAP DISCONTINUITIES AND EFFECTIVE MASSES FOR GAAS-ALXGA1-XAS QUANTUM WELLS
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[4] STORMER HL, 1984, APPL PHYS LETT, V44, P139, DOI 10.1063/1.94580
[5] FRACTIONAL QUANTIZATION OF THE HALL-EFFECT
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[J]. PHYSICAL REVIEW LETTERS, 1983, 50 (24) : 1953 - 1956
[6] STORMER HL, 1984, APPL PHYS LETT, V44, P1062, DOI 10.1063/1.94643
[7] STORMER HL, 1980, APPL PHYS LETT, V36, P685, DOI 10.1063/1.91624
[8] ENERGY STRUCTURE AND QUANTIZED HALL-EFFECT OF TWO-DIMENSIONAL HOLES
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CHANG, A
TSUI, DC
GOSSARD, AC
WIEGMANN, W
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (02) : 126 - 129