FABRICATION OF SI-COUPLED 3 TERMINAL SUPERCONDUCTING DEVICE USING SELECTIVE DEPOSITION OF BETA-W

被引：1

作者：

BAKKER, SJM

ROUSSEEUW, BAC

VANDERDRIFT, E

KLAPWIJK, TM

RADELAAR, S

机构：

[1] Delft Institute for Micro Electronics and Submicron technology (DIMES), Delft University of Technology, 2600 GA Delft

[2] Department of Applied Physics, Materials Science Centre, University of Groningen, 9747 AG Groningen

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 21卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(93)90107-G

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of a silicon coupled superconducting FET using beta-W as a superconductor is reported. Devices with gate lengths of about 100 nm until 1 mum and with various substrate doping levels have been made. The fabrication process includes combined optical and e-beam lithography and self aligned CVD beta-W deposition. Preliminary measurements of these devices are presented.

引用

页码：435 / 438

页数：4