PHYSICAL BASIS OF SCATTERING POTENTIAL AT GRAIN-BOUNDARY OF POLYCRYSTALLINE SEMICONDUCTORS

被引:23
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WU, CM
YANG, ES
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10.1063/1.92914
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O59 [应用物理学];
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页码:49 / 51
页数:3
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共 11 条
[1]  
Eisberg R. M., 1967, FUNDAMENTALS MODERN
[2]  
LU NCC, 1981, ELECTRON DEVIC LETT, V2, P95, DOI 10.1109/EDL.1981.25354
[3]  
LU NCC, 1980, IEEE ELECTRON DEVICE, V1, P38
[4]   PHOSPHORUS DOPING OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS [J].
MANDURAH, MM ;
SARASWAT, KC ;
KAMINS, TI .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :1019-1023
[5]   GRAIN-BOUNDARY POTENTIAL DETERMINATION IN POLYCRYSTALLINE SILICON BY THE SCANNING LIGHT SPOT TECHNIQUE [J].
MARTINEZ, J ;
CRIADO, A ;
PIQUERAS, J .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1301-1305
[6]   ELECTRICAL-RESISTIVITY MODEL FOR POLYCRYSTALLINE FILMS - CASE OF ARBITRARY REFLECTION AT EXTERNAL SURFACES [J].
MAYADAS, AF ;
SHATZKES, M .
PHYSICAL REVIEW B, 1970, 1 (04) :1382-&
[7]   DC VOLTAGE DEPENDENCE OF SEMICONDUCTOR GRAIN-BOUNDARY RESISTANCE [J].
PIKE, GE ;
SEAGER, CH .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3414-3422
[8]  
Redfield D., 1981, Fifteenth IEEE Photovoltaic Specialists Conference - 1981, P1179
[9]   GRAIN-BOUNDARY STATES AND VARISTOR BEHAVIOR IN SILICON BICRYSTALS [J].
SEAGER, CH ;
PIKE, GE .
APPLIED PHYSICS LETTERS, 1979, 35 (09) :709-711
[10]   ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].
SETO, JYW .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5247-5254