THE EFFECT OF ANNEALING ON THE STRUCTURE OF GE20TE80 GLASS - ATOMIC-SCALE IMAGING USING A SCANNING TUNNELING MICROSCOPE

被引:5
作者
ICHIKAWA, K
机构
[1] Department of Chemistry, Faculty of Science, Hokkaido University, Sapporo
关键词
D O I
10.1016/0022-3093(92)90167-I
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The effect of annealing on the structure of Ge20Te80 glass has been examined in atomic-scale images obtained using a scanning tunnelling microscope (STM). The STM image has been able in part to answer the question as to how the atomic structure is changed by low-temperature (< T(g)) annealing, whereas the effect of annealing on the structure was never observed in previous neutron diffraction study. Scanning tunneling microscope images as large as approximately 100 nm2 have provided atomic-resolution ridges approximately 3 nm in length. The nearest neighbour distance between peaks in each alignment is equal to approximately 0.5 nm; the alignments in parallel with each other are a distance of approximately 0.7 nm apart. These ridges can generate a surface associated with pseudo flatness, the size of which is less than approximately 10 nm2. Thus, the effect of annealing on the structure of as-quenched Ge20Te80 glass has given rise to intermediate-range order in a region less than approximately 10 nm2. The atomic configuration of annealed Ge20Te80 glass is inhomogeneous in the range < 10 nm2.
引用
收藏
页码:435 / 439
页数:5
相关论文
共 10 条
[1]   IMAGING IN REAL-TIME WITH THE TUNNELING MICROSCOPE [J].
BRYANT, A ;
SMITH, DPE ;
QUATE, CF .
APPLIED PHYSICS LETTERS, 1986, 48 (13) :832-834
[2]   SCANNING TUNNELING MICROSCOPY [J].
HANSMA, PK ;
TERSOFF, J .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) :R1-R23
[3]   NEUTRON-DIFFRACTION OF AS-QUENCHED GE20TE80 GLASS NEAR THE GLASS-UNDERCOOLED LIQUID TRANSITION [J].
ICHIKAWA, K ;
KAMEDA, Y ;
XU, Q ;
MISAWA, M .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 95-6 :185-192
[4]  
ICHIKAWA K, UNPUB
[5]   NEW COMPOUND IN GE-TE SYSTEM [J].
MOORE, AG ;
MAGHRABI, C ;
PARKER, JM .
JOURNAL OF MATERIALS SCIENCE, 1978, 13 (05) :1127-1130
[6]  
Moss S. C., 1985, PHYS DISORDERED MAT, P77
[8]   PSEUDOPOTENTIAL CALCULATIONS OF ELECTRONIC CHARGE DENSITIES IN 7 SEMICONDUCTORS [J].
WALTER, JP ;
COHEN, ML .
PHYSICAL REVIEW B, 1971, 4 (06) :1877-&
[9]  
WIESENDANGER R, 1990, MATER RES SOC SYMP P, V183, P237, DOI 10.1557/PROC-183-237
[10]   KINETIC ASPECTS OF HEAT-CAPACITY IN THE ANNEALING OF GE20TE80 GLASSES [J].
XU, Q ;
ICHIKAWA, K .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (36) :7145-7156