NEUTRAL-IMPURITY SCATTERING IN ISOTOPICALLY ENGINEERED GE

被引：17

作者：

ITOH, KM

WALUKIEWICZ, W

FUCHS, HD

BEEMANM, JW

HALLER, EE

FARMER, JW

OZHOGIN, VI

机构：

[1] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

[2] UNIV MISSOURI,COLUMBIA,MO 65211

[3] IV KURCHATOV ATOM ENERGY INST,MOSCOW 123182,RUSSIA

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.50.16995

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Neutral-impurity scattering of electrons and holes at low temperatures has been studied in isotopically engineered Ge single crystals. Use of the neutron transmutation doping technique provides the necessary dopant uniformity and low compensation. We find excellent agreement between the low-temperature experimental mobility and phase-shift calculations for the hydrogen atom scaled to the impurity atoms in semiconductors. © 1994 The American Physical Society.

引用

页码：16995 / 17000

页数：6

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