COMPUTER-AIDED ANALYSIS OF ELECTRON-BEAM INDUCED HEATING, MELTING, AND RESOLIDIFICATION OF METALS AND SEMICONDUCTORS

被引：2

作者：

BHATTACHARYYA, MK

TUMA, DT

CENDES, ZJ

机构：

[1] Carnegie-Mellon Univ, Dep of, Electrical Engineering, Pittsburgh,, PA, USA, Carnegie-Mellon Univ, Dep of Electrical Engineering, Pittsburgh, PA, USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 01期

关键词：

COPPER AND ALLOYS - Processing - ELECTRON BEAMS - Applications - SEMICONDUCTING SILICON - Processing - SEMICONDUCTOR MATERIALS - Processing;

D O I：

10.1116/1.583283

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The problem of heating, melting, and resolidification of solid targets by collimated electron beams is discussed. The transient multiphase moving boundary problem has been solved by the finite element method using an enthalpy formulation. The effect of electron beam penetration and material properties variation with temperature have been taken into consideration. Results are presented for the extent of melting for copper and silicon. The velocity of resolidification for copper is 10-20 m/s, whereas for silicon it is about 1-3 m/s. The results agree very well with published experimental measurements.

引用

页码：441 / 446

页数：6

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