ANALYSIS OF RBS SPECTRA FROM SAMPLES IMPLANTED TO HIGH-DOSE

被引:2
作者
JENSEN, K
FARLOW, GC
机构
[1] Wright State University, Dayton
关键词
D O I
10.1016/0168-583X(91)95294-N
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A procedure for extracting the local stoichiometry and atomic fraction of constituents from RBS spectra of a sample implanted to high dose is described. The procedure is applied to SiO2 and when combined with an assumption about oxygen concentration is used to deduce the volume concentration of Si vs depth in the sample.
引用
收藏
页码:643 / 646
页数:4
相关论文
共 3 条
[1]  
CHU WK, 1978, BACKSCATTERING SPECT, P129
[3]  
JACKSON HE, 1989, APPL PHYS LETT, V55, P1199