SPATIAL-DISTRIBUTION OF FREE-CARRIER LIFETIME AND DEEP-LEVEL LUMINESCENCE ACROSS A SEMIINSULATING GAAS WAFER

被引:33
作者
LEO, K [1 ]
RUHLE, WW [1 ]
HAEGEL, NM [1 ]
机构
[1] SIEMENS AG,RES & DEV LABS,D-8520 ERLANGEN,FED REP GER
关键词
D O I
10.1063/1.339370
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3055 / 3058
页数:4
相关论文
共 16 条
[11]  
Tajima M., 1986, Materials Science Forum, V10-12, P1265, DOI 10.4028/www.scientific.net/MSF.10-12.1265
[12]  
TAJIMA M, 1986, 4TH P C SEM 3 5 MAT, P305
[13]   OPTICALLY DETECTED MAGNETIC-RESONANCE OF THE ASGA ANTISITE VIA LUMINESCENCE IN GAAS [J].
WEBER, J ;
WATKINS, GD .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (10) :L269-L273
[14]   DIRECT AND FAST COMPARISON OF NEAR-INFRARED ABSORPTION AND PHOTOLUMINESCENCE TOPOGRAPHY OF SEMIINSULATING GAAS WAFERS [J].
WETTLING, W ;
WINDSCHEIF, J .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 40 (03) :191-195
[15]   ANNEALING BEHAVIOR OF THE 0,8EV LUMINESCENCE IN UNDOPED SEMI-INSULATING GAAS [J].
WINDSCHEIF, J ;
ENNEN, H ;
KAUFMANN, U ;
SCHNEIDER, J ;
KIMURA, T .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 30 (01) :47-49