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PURIFICATION AND IMPURITY DETECTION IN SILICON FOR MICROELECTRONICS
被引:1
作者
:
DOMENICI, M
论文数:
0
引用数:
0
h-index:
0
DOMENICI, M
MALINVERNI, P
论文数:
0
引用数:
0
h-index:
0
MALINVERNI, P
PEDROTTI, M
论文数:
0
引用数:
0
h-index:
0
PEDROTTI, M
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1986年
/ 75卷
/ 01期
关键词
:
D O I
:
10.1016/0022-0248(86)90227-7
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:80 / 87
页数:8
相关论文
共 6 条
[1]
DOMENICI M, 1984, ASTM STP, V850
[2]
GRAFF K, 1983, TRANSITION METAL IMP
[3]
LANG DV, 1974, J APPL PHYS, V45, P7
[4]
MAY S, ANAL ACTIVATION NEUT
[5]
PEARCE CW, 1983, DEFECT CONTAMINATION
[6]
A NEUTRON-ACTIVATION ANALYSIS STUDY OF THE SOURCES OF TRANSITION GROUP METAL CONTAMINATION IN THE SILICON DEVICE MANUFACTURING PROCESS
SCHMIDT, PF
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,ALLENTOWN,PA 18103
WESTERN ELECT CO INC,ALLENTOWN,PA 18103
SCHMIDT, PF
PEARCE, CW
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,ALLENTOWN,PA 18103
WESTERN ELECT CO INC,ALLENTOWN,PA 18103
PEARCE, CW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(03)
: 630
-
636
←
1
→
共 6 条
[1]
DOMENICI M, 1984, ASTM STP, V850
[2]
GRAFF K, 1983, TRANSITION METAL IMP
[3]
LANG DV, 1974, J APPL PHYS, V45, P7
[4]
MAY S, ANAL ACTIVATION NEUT
[5]
PEARCE CW, 1983, DEFECT CONTAMINATION
[6]
A NEUTRON-ACTIVATION ANALYSIS STUDY OF THE SOURCES OF TRANSITION GROUP METAL CONTAMINATION IN THE SILICON DEVICE MANUFACTURING PROCESS
SCHMIDT, PF
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,ALLENTOWN,PA 18103
WESTERN ELECT CO INC,ALLENTOWN,PA 18103
SCHMIDT, PF
PEARCE, CW
论文数:
0
引用数:
0
h-index:
0
机构:
WESTERN ELECT CO INC,ALLENTOWN,PA 18103
WESTERN ELECT CO INC,ALLENTOWN,PA 18103
PEARCE, CW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(03)
: 630
-
636
←
1
→