ROLE OF MICROWAVE OXYGEN PLASMA IN THE LOW-TEMPERATURE GROWTH OF HOBA2CU3OX THIN-FILMS

被引：11

作者：

TSUKAMOTO, A

HIRATANI, M

AKAMATSU, S

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo

来源：

PHYSICA C | 1991年 / 181卷 / 4-6期

关键词：

D O I：

10.1016/0921-4534(91)90125-I

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The oxidizing activity of ECR oxygen plasma is investigated by evaluating the oxidation state of the HoBa2Cu3Ox (HBCO) thin films annealed in this plasma. The conditions under which these films grow and under which they are thermodynamically stable were determined in molecular oxygen and in oxygen plasma. The oxidizing activity of oxygen plasma is equivalent to that of molecular oxygen at a pressure three orders of magnitude higher. Oxygen plasma expands the thermodynamic stability limit toward higher temperatures and the oxidizing activity limit toward lower oxygen pressures.

引用

页码：369 / 373

页数：5

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