CURRENT-DENSITY EFFECTS IN SECONDARY ION EMISSION STUDIES

被引：28

作者：

WITTMAACK, K ^{[1
]}

机构：

[1] GESELL STRAHLEN & UMWELTFORSCH MBH,PHYS TECH ABT,D-8042 NEUHERBERG,BUNDES REPUBLIK

来源：

NUCLEAR INSTRUMENTS & METHODS | 1976年 / 132卷 / JAN-F期

关键词：

D O I：

10.1016/0029-554X(76)90762-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：381 / 385

页数：5

共 17 条

[1]

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[3]

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[4]

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[5] SECONDARY ION EMISSION FROM SILICON AND SILICON-OXIDE [J].

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[6]

SIGMUND P, 1972, REV ROUM PHYS, V17, P1079

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SIGMUND, P .

PHYSICAL REVIEW, 1969, 184 (02) :383-+

[8]

Staudenmaier G., 1972, Radiation Effects, V13, P87, DOI 10.1080/00337577208231164

[9] VELOCITY DEPENDENCE OF IONIZATION OF AR, KR, AND XE ON IMPACT OF METASTABLE NEON ATOMS [J].

TANG, SY ;

MUSCHLIT.EE ;

MARCUS, AB .

JOURNAL OF CHEMICAL PHYSICS, 1972, 56 (01) :566-+

[10] RADIATIVE LIFETIME OF METASTABLE 21S0 STATE OF HELIUM [J].

VANDYCK, RS ;

JOHNSON, CE ;

SHUGART, HA .

PHYSICAL REVIEW LETTERS, 1970, 25 (20) :1403-&

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