SECOND-ORDER OPTICAL SUSCEPTIBILITIES OF 3-5 SEMICONDUCTORS

被引:114
作者
FLYTZANIS, C
DUCUING, J
机构
[1] Laboratoire d'Optique Quantique, Institut d'Optique, Faculté des Sciences
来源
PHYSICAL REVIEW | 1969年 / 178卷 / 03期
关键词
D O I
10.1103/PhysRev.178.1218
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
An ab initio calculation of the low-frequency limit of the second-order optical susceptibility χ14(2) is presented for eight III-V compounds possessing the zinc-blende symmetry. In the frequency range considered (above the lattice absorption and below the onset of real electronic transitions), the molecular model due to Coulson, Rédei, and Stocker can be used. The susceptibilities χ(1) and χ14(2) are expressed in terms of bond polarizabilities. These last quantities are calculated, using a variational perturbation procedure. Effective-field corrections are included in a semiempirical way. Numerical results are given for the following compounds: InSb, InAs, InP, GaSb, GaAs, GaP, AlSb, and BP. They are in good agreement with the available experimental values. For boron phosphide, for which no such data exist, our predicted value is very low, in disagreement with the usual formulation of Miller's rule. This is discussed within the framework of a linear correlation shown by our results to exist between Miller's reduced coefficient and the bond dipole moment p. © 1969 The American Physical Society.
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页码:1218 / +
页数:1
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