INFLUENCE OF PRESSURE ON TEMPERATURE SENSITIVITY OF GAXIN1-XASYP1-Y LASERS

被引：6

作者：

ADAMS, AR ^{[1
]}

PATEL, D ^{[1
]}

GREENE, PD ^{[1
]}

HENSHALL, GD ^{[1
]}

机构：

[1] STAND TELECOMMUN LABS LTD,HARLOW CM17 9NA,ESSEX,ENGLAND

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 21期

关键词：

D O I：

10.1049/el:19820626

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：919 / 920

页数：2

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[1] THE TEMPERATURE-DEPENDENCE OF THE EFFICIENCY AND THRESHOLD CURRENT OF IN1-XGAXASYP1-Y LASERS RELATED TO INTERVALENCE BAND ABSORPTION [J].

ADAMS, AR ;

ASADA, M ;

SUEMATSU, Y ;

ARAI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L621-L624

[2] TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERS [J].

HORIKOSHI, Y ;

FURUKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (04) :809-815

[3] PRESSURE-DEPENDENCE OF THRESHOLD CURRENT IN GAXIN1-XASYP1-Y LASERS [J].

PATEL, D ;

ADAMS, AR ;

GREENE, PD ;

HENSHALL, GD .

ELECTRONICS LETTERS, 1982, 18 (12) :527-528

[4] NONRADIATIVE CARRIER LOSS AND TEMPERATURE SENSITIVITY OF THRESHOLD IN 1.27 MU-M (GALN)(ASP)-INP DH LASERS [J].

THOMPSON, GHB ;

HENSHALL, GD .

ELECTRONICS LETTERS, 1980, 16 (01) :42-44

[5] ANALYSIS OF ELECTRICAL, THRESHOLD, AND TEMPERATURE CHARACTERISTICS OF INGAASP-INP DOUBLE-HETEROJUNCTION LASERS [J].

YANO, M ;

IMAI, H ;

TAKUSAGAWA, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (09) :1954-1963