PLANAR INSB PHOTODIODES FABRICATED BY BE AND MG ION-IMPLANTATION

[1] N-P JUNCTION PHOTODETECTORS IN INSB FABRICATED BY PROTON BOMBARDMENT [J]. APPLIED PHYSICS LETTERS, 1970, 16 (09) : 335 - &

[2] FOYT AG, 1972, MAR M IRIS SPEC GROU

[3] HURWITZ C, UNPUBLISHED WORK

[4] HURWITZ CE, 1972, MAR M IRIS SPEC GROU

[5] HURWITZ CE, 1973, MAR M IRIS SPEC GROU

[6] KOROB EB, 1972, SOVIET B ACAD SCI P, V36, P1670

[7] LANGGUTH G, 1971, ION IMPLANTATION SEM, P228

[8] McNally P. J., 1970, Radiation Effects, V6, P149, DOI 10.1080/00337577008235058

[9] MCNALLY PJ, COMMUNICATION

[10] THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE [J]. PHYSICAL REVIEW, 1958, 110 (06): : 1254 - 1262

[1] N-P JUNCTION PHOTODETECTORS IN INSB FABRICATED BY PROTON BOMBARDMENT [J]. APPLIED PHYSICS LETTERS, 1970, 16 (09) : 335 - &

[2] FOYT AG, 1972, MAR M IRIS SPEC GROU

[3] HURWITZ C, UNPUBLISHED WORK

[4] HURWITZ CE, 1972, MAR M IRIS SPEC GROU

[5] HURWITZ CE, 1973, MAR M IRIS SPEC GROU

[6] KOROB EB, 1972, SOVIET B ACAD SCI P, V36, P1670

[7] LANGGUTH G, 1971, ION IMPLANTATION SEM, P228

[8] McNally P. J., 1970, Radiation Effects, V6, P149, DOI 10.1080/00337577008235058

[9] MCNALLY PJ, COMMUNICATION

[10] THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE [J]. PHYSICAL REVIEW, 1958, 110 (06): : 1254 - 1262