PHYSICAL-PROPERTIES OF MEMORY QUALITY PECVD SILICON-NITRIDE

被引：14

作者：

KHALIQ, MA

SHAMS, QA

BROWN, WD

NASEEM, HA

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 05期

关键词：

D O I：

10.1007/BF02652118

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：355 / 359

页数：5

共 17 条

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[7]

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