THE COMMON ANION RULE - AN ELECTROCHEMICAL CONTRIBUTION

[1] ELECTROREFLECTANCE AND BAND-STRUCTURE OF GAXIN1-XP ALLOYS [J]. PHYSICAL REVIEW B, 1972, 6 (04): : 1301 - &

[2] CHEVALLIER J, 1970, CR ACAD SCI B PHYS, V271, P1037

[3] GERISCHER H, 1970, PHYSICAL CHEM ADV A, V9, pCH5

[4] GOMES WP, 1977, P SEMICONDUCTOR LIQU, P120

[5] HERLEM M, 1967, THESIS PARIS

[6] Jones R.O., 1975, SURFACE PHYSICS SEMI

[7] COMPOSITIONAL DEPENDENCE OF SCHOTTKY-BARRIER HEIGHTS FOR AU ON CHEMICALLY ETCHED INXGA1-XP SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 891 - 893

[8] IMPEDANCE MEASUREMENT IN ELECTROCHEMISTRY OF SEMICONDUCTORS - INFLUENCE OF SURFACE-STATES [J]. SURFACE SCIENCE, 1976, 59 (01) : 177 - 194

[9] LOHMANN F, 1967, Z NATURFORSCH PT A, VA 22, P843

[10] SCHOTTKY BARRIERS ON COMPOUND SEMICONDUCTORS - ROLE OF ANION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 802 - 806

[1] ELECTROREFLECTANCE AND BAND-STRUCTURE OF GAXIN1-XP ALLOYS [J]. PHYSICAL REVIEW B, 1972, 6 (04): : 1301 - &

[2] CHEVALLIER J, 1970, CR ACAD SCI B PHYS, V271, P1037

[3] GERISCHER H, 1970, PHYSICAL CHEM ADV A, V9, pCH5

[4] GOMES WP, 1977, P SEMICONDUCTOR LIQU, P120

[5] HERLEM M, 1967, THESIS PARIS

[6] Jones R.O., 1975, SURFACE PHYSICS SEMI

[7] COMPOSITIONAL DEPENDENCE OF SCHOTTKY-BARRIER HEIGHTS FOR AU ON CHEMICALLY ETCHED INXGA1-XP SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 891 - 893

[8] IMPEDANCE MEASUREMENT IN ELECTROCHEMISTRY OF SEMICONDUCTORS - INFLUENCE OF SURFACE-STATES [J]. SURFACE SCIENCE, 1976, 59 (01) : 177 - 194

[9] LOHMANN F, 1967, Z NATURFORSCH PT A, VA 22, P843

[10] SCHOTTKY BARRIERS ON COMPOUND SEMICONDUCTORS - ROLE OF ANION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 802 - 806