THE SCANNING TUNNELING MICROSCOPE AS A MEANS FOR THE INVESTIGATION OF ION-BOMBARDMENT EFFECTS ON METAL-SURFACES

被引:84
作者
MICHELY, T
COMSA, G
机构
[1] Institut für Grenzflächenforschung und Vakuumphysik, KFA Forschungszentrum Jülich, 5170 Jülich
关键词
D O I
10.1016/0168-583X(93)96023-6
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The scanning tunneling microscopy (STM) is used to investigate the surface morphology of Pt(Ill) after 600 eV Ar+ ion bombardment in dependence on ion dose and temperature during sputtering. The surface morphological evolution during sputtering in the pit formation and in the layer-by-layer removal regime is monitored by STM. Two new types of structures produced during Ar+ sputtering (target adatom islands and subatomic height bumps) and uncovered by STM measurements are presented and their creation mechanisms discussed. Finally a new STM-based method of yield determination is proposed. The range of applicability of the method is analysed and the morphology dependence of the sputtering yield is investigated.
引用
收藏
页码:207 / 219
页数:13
相关论文
共 38 条