TRANSIENT CAPACITANCE STUDY OF DEFECTS INTRODUCED BY ELECTRON-BEAM DEPOSITION OF METALS ON P-TYPE SILICON

被引：35

作者：

AURET, FD

MOONEY, PM

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] IBM CORP,E FISHKILL LABS,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 04期

关键词：

D O I：

10.1063/1.333154

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：984 / 987

页数：4

共 15 条

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[6]

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[8]

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[9]

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[10] TRANSIENT CAPACITANCE STUDY OF RADIATION-INDUCED DEFECTS IN ALUMINUM-DOPED SILICON [J].

LEE, YH ;

WANG, KL ;

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PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 57 (02) :697-704

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