PHOTODARKENING IN BULK, GLASSY AS2S3

被引：7

作者：

LIU, JZ

TAYLOR, PC

机构：

[1] Univ of Utah, Salt Lake City, UT,, USA, Univ of Utah, Salt Lake City, UT, USA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷

关键词：

SEMICONDUCTING GLASS - Optical Properties;

D O I：

10.1016/0022-3093(85)90872-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The photodarkening (PD) effect has been studied in bulk, glassy As//2S//3 with an irradiation energy of 2. 41 ev. It is shown that the commonly observed saturation of PD effect is an apparent saturation. The time dependence of PD as a function of irradiation intensity shows that the PD rate is proportional to the intensity. At lower temperatures, the time dependence of PD (near 2. 2 ev) suggests two inducing processes. A transient component of the PD has been observed in these stoichiometric samples.

引用

收藏

页码：1195 / 1198

页数：4

相关论文

共 12 条

[1] PHOTOINDUCED DEFECTS IN CHALCOGENIDE GLASSES [J].

BIEGELSEN, DK ;

STREET, RA .

PHYSICAL REVIEW LETTERS, 1980, 44 (12) :803-806

[2] OPTICALLY INDUCED LOCALIZED PARAMAGNETIC STATES IN CHALCOGENIDE GLASSES [J].

BISHOP, SG ;

STROM, U ;

TAYLOR, PC .

PHYSICAL REVIEW LETTERS, 1975, 34 (21) :1346-1350

[3] OPTICALLY INDUCED METASTABLE PARAMAGNETIC STATES IN AMORPHOUS-SEMICONDUCTORS [J].

BISHOP, SG ;

STROM, U ;

TAYLOR, PC .

PHYSICAL REVIEW B, 1977, 15 (04) :2278-2294

[4]

DENEUFVILLE JP, 1976, OPTICAL PROPERTIES S, pCH9

[5]

GUREVICH SB, 1976, GOLOGRAFIYA OBRABOTK, P146

[6] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].

KASTNER, M ;

ADLER, D ;

FRITZSCHE, H .

PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507

[7] DEFECT CHEMISTRY OF LONE-PAIR SEMICONDUCTORS [J].

KASTNER, M ;

FRITZSCHE, H .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (02) :199-215

[8] STATES IN GAP IN GLASSY SEMICONDUCTORS [J].

STREET, RA ;

MOTT, NF .

PHYSICAL REVIEW LETTERS, 1975, 35 (19) :1293-1296

[9] RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].

STREET, RA .

PHYSICAL REVIEW B, 1978, 17 (10) :3984-3995

[10] ANOMALOUS PHOTOINDUCED SHIFT OF OPTICAL TRANSMISSION EDGE OBSERVED IN AMORPHOUS AS2S3 FILM [J].

TANAKA, K ;

KIKUCHI, M .

SOLID STATE COMMUNICATIONS, 1972, 11 (10) :1311-&