SURFACE-STATES OF THE SI(111)-ADATOM SYSTEMS

被引：9

作者：

NAGAYOSHI, H ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,DEPT MAT PHYS,TOYONAKA,OSAKA 560,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1988年 / 57卷 / 06期

关键词：

D O I：

10.1143/JPSJ.57.2105

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2105 / 2110

页数：6

共 15 条

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[2] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD
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[3] ADSORPTION STATES AND ADSORPTION-KINETICS OF ATOMIC-HYDROGEN ON SILICON CRYSTAL-SURFACES
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KOHLER, U
LAMMERING, H
[J]. SURFACE SCIENCE, 1985, 149 (2-3) : 537 - 557
[4] ELECTRONIC-STRUCTURE OF SI(111) SURFACES WITH GROUP III AD-ATOMS
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NICHOLLS, JM
MARTENSSON, P
UHRBERG, RIG
[J]. SURFACE SCIENCE, 1986, 168 (1-3) : 105 - 113
[5] ELECTRONIC-STRUCTURES OF CHEMISORPTION SYSTEMS ON SI(111) SURFACE .1. SI(111) 7X7/H,CL
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TSUKADA, M
[J]. SURFACE SCIENCE, 1982, 115 (01) : 104 - 116
[6] ELECTRONIC-STRUCTURE OF THE ALKALI-METAL OVERLAYERS ON THE PI-BONDED SI(111)2X1 SURFACE
ISHIDA, H
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TSUKADA, M
[J]. SOLID STATE COMMUNICATIONS, 1986, 59 (06) : 365 - 369
[7] ANGLE-RESOLVED PHOTOELECTRON-SPECTROSCOPY STUDY OF THE SI(111) SQUARE-ROOT-3X-SQUARE-ROOT-3-SN SURFACE - COMPARISON WITH SI(111) SQUARE-ROOT-3X-SQUARE-ROOT-3-AL, SQUARE-ROOT-3X-SQUARE-ROOT-3-GA, AND SQUARE-ROOT-3XSQUARE-ROOT-3-IN SURFACES
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SAGAWA, T
[J]. PHYSICAL REVIEW B, 1986, 34 (04): : 3011 - 3014
[8] NAGAYOSHI H, 1985, 7TH P TAN S DYN PROC, P167
[9] SI(111) SQUARE-ROOT 3 X SQUARE-ROOT 3-AL - AN ADATOM-INDUCED RECONSTRUCTION
NORTHRUP, JE
[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (07) : 683 - 686
[10] ORIGIN OF SURFACE-STATES ON SI(111)(7X7)
NORTHRUP, JE
[J]. PHYSICAL REVIEW LETTERS, 1986, 57 (01) : 154 - 157

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