FIELD-INDUCED RESONANT TUNNELING BETWEEN PARALLEL 2-DIMENSIONAL ELECTRON-SYSTEMS

被引：83

作者：

EISENSTEIN, JP

PFEIFFER, LN

WEST, KW

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 14期

关键词：

D O I：

10.1063/1.105157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resonant tunneling between two high-mobility two-dimensional (2D) electron systems in a double quantum well structure has been induced by the action of an external Schottky gate field. Using one 2D electron gas as source and the other as drain, the tunnel conductance between them shows a strong resonance when the gate field aligns the ground subband edges of the two quantum wells.

引用

页码：1497 / 1499

页数：3

共 6 条

[1]

Capasso F., 1990, SPRINGER SERIES ELEC, V28

[2] INDEPENDENTLY CONTACTED 2-DIMENSIONAL ELECTRON-SYSTEMS IN DOUBLE QUANTUM-WELLS [J].