SEMICONDUCTOR LITHIUM-ION DRIFT DIODES AS HIGH-RESOLUTION GAMMA-RAY PAIR SPECTROMETERS

被引:49
作者
TAVENDALE, AJ
机构
关键词
D O I
10.1109/TNS.1964.4323422
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:191 / +
页数:1
相关论文
共 15 条
[1]  
CHASMAN C, 1963, YALE REPORT
[2]  
EWAN GT, IN PRESS
[3]   GAMMA-RAY SPECTRUM OBTAINED WITH A LITHIUM-DRIFTED P-I-N JUNCTION IN GERMANIUM [J].
FRECK, DV ;
WAKEFIELD, J .
NATURE, 1962, 193 (4816) :669-&
[4]   MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON [J].
FULLER, CS ;
SEVERIENS, JC .
PHYSICAL REVIEW, 1954, 96 (01) :21-24
[5]  
HANNAY NB, 1959, SEMICONDUCTORS, P251
[6]  
MAYER JW, 1961, IAEA C NUCLEAR ELECT, V1, P567
[7]  
MORIN FJ, 1957, J PHYS CHEM SOLIDS, V3, P196
[8]  
PATWARDHAN PK, PRIVATE COMMUNICATIO
[9]   DRIFT MOBILITIES IN SEMICONDUCTORS .1. GERMANIUM [J].
PRINCE, MB .
PHYSICAL REVIEW, 1953, 92 (03) :681-687
[10]  
REISS H, 1959, SEMICONDUCTORS, P251