STATISTICAL DISTRIBUTION OF TRAJECTORIES IN THE TIME-INTENSITY PLANE DURING SEMICONDUCTOR-LASER GAIN SWITCHING

被引：32

作者：

SPANO, P

MECOZZI, A

SAPIA, A

机构：

[1] Fondazione Ugo Bordoni, Via B. Castiglione 59

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 64卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.64.3003

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that a semiconductor laser switched from below to above threshold by a gradual increase of the optical gain, which follows a stepwise change of the injected current (gain switching), exhibits, besides a random distribution of the turn-on times, peculiar features in the time-intensity evolution. In particular, we find that the switching trajectories in the time-intensity plane cluster under a line at a nonzero angle off the time axis. This new effect can be used to discriminate transient fluctuations due to spontaneous emission against those arising from other effects. © 1990 The American Physical Society.

引用

页码：3003 / 3006

页数：4

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