PREPARATION AND CHARACTERIZATION OF THIN CSAU FILMS

被引:41
作者
SKOTTKEKLEIN, M
BOTTCHER, A
IMBECK, R
KENNOU, S
MORGANTE, A
ERTL, G
机构
[1] Fritz-Haber-Institut der Max-Planck-Gesellschaft, W-1000 Berlin 33
关键词
D O I
10.1016/0040-6090(91)90524-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The formation of CsAu films by successive evaporation of gold and caesium atoms onto a clean Ru(001) Substrate surface was followed by UV photoelectron spectroscopy and (subsequent) thermal desorption spectroscopy. No compound but only a chemisorbed layer (and eventually bulk caesium) is formed if caesium is deposited onto a gold layer, if the quantity of the latter itself does not exceed the monolayer capacity. With thicker gold layers, on the contrary, semiconducting CsAu (with a band gap of 2.6 eV and the Fermi level close to the conduction band edge) is formed by. Interdiffusion a T > 250 K. but the outer surface consists always of a layer of chemisorbed caesium. This even holds for a "sandwich" system for which a thick gold film was evaporated onto a CsAu layer. The surface region of CsAu is highly reactive towards oxygen.
引用
收藏
页码:131 / 145
页数:15
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