EFFECT OF SI DOPING ON SURFACE ORDERING OF MBE GAAS(001)

被引:13
作者
PASHLEY, MD
HABERERN, KW
机构
[1] Philips Laboratories, North American Philips Corporation, Briarcliff Manor
关键词
D O I
10.1016/0304-3991(92)90436-N
中图分类号
TH742 [显微镜];
学科分类号
摘要
We have found that high levels of Si doping of MBE-grown (001)GaAs induce a change in the ordering of the (2x4)/c(2x8) surface reconstruction. Scanning tunneling microscope (STM) images show that this arises from the formation of large numbers of kinks in the dimer-vacancy rows of the (2x4)/c(2x8) reconstruction. The kinks occur in lines across the surface, forming domain boundaries between well ordered regions of c(2x8) surface. We are able to show that these kink sites act as surface acceptors. They are formed so as to allow electrons in the doped layer to drop from the Fermi level to the acceptor state, lowering the electronic energy of the surface region. The band-bending that results from this causes pinning of the Fermi level at the surface. Quantitative measurements of the surface density of these kink sites as a function of doping level and layer thickness allow us to determine that each kink site accepts one electron.
引用
收藏
页码:1281 / 1287
页数:7
相关论文
共 16 条
[1]   RECONSTRUCTIONS OF GAAS(1BAR1BAR1BAR) SURFACES OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].
BIEGELSEN, DK ;
BRINGANS, RD ;
NORTHRUP, JE ;
SWARTZ, LE .
PHYSICAL REVIEW LETTERS, 1990, 65 (04) :452-455
[2]   SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].
BIEGELSEN, DK ;
BRINGANS, RD ;
NORTHRUP, JE ;
SWARTZ, LE .
PHYSICAL REVIEW B, 1990, 41 (09) :5701-5706
[3]   7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J].
BINNIG, G ;
ROHRER, H ;
GERBER, C ;
WEIBEL, E .
PHYSICAL REVIEW LETTERS, 1983, 50 (02) :120-123
[4]   ATOMIC-STRUCTURE OF GAAS(100)-(2X1) AND GAAS(100)-(2X4) RECONSTRUCTED SURFACES [J].
CHADI, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :834-837
[5]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION CHARACTERISTIC ABSENCES IN GAAS(100) (2X4)-AS - A TOOL FOR DETERMINING THE SURFACE STOICHIOMETRY [J].
FARRELL, HH ;
PALMSTROM, CJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :903-907
[6]   LOW-RESISTANCE NONALLOYED OHMIC CONTACTS TO SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS [J].
KIRCHNER, PD ;
JACKSON, TN ;
PETTIT, GD ;
WOODALL, JM .
APPLIED PHYSICS LETTERS, 1985, 47 (01) :26-28
[7]   ANISOTROPY IN SURFACE MIGRATION OF SI AND GE ON SI(001) [J].
MO, YW ;
LAGALLY, MG .
SURFACE SCIENCE, 1991, 248 (03) :313-320
[8]   THE APPLICATION OF SCANNING TUNNELING MICROSCOPY TO THE STUDY OF MOLECULAR-BEAM EPITAXY [J].
PASHLEY, MD .
JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) :473-481
[9]   STRUCTURE OF GAAS(001) (2X4)-C(2X8) DETERMINED BY SCANNING TUNNELING MICROSCOPY [J].
PASHLEY, MD ;
HABERERN, KW ;
FRIDAY, W ;
WOODALL, JM ;
KIRCHNER, PD .
PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2176-2179
[10]   ELECTRON COUNTING MODEL AND ITS APPLICATION TO ISLAND STRUCTURES ON MOLECULAR-BEAM EPITAXY GROWN GAAS(001) AND ZNSE(001) [J].
PASHLEY, MD .
PHYSICAL REVIEW B, 1989, 40 (15) :10481-10487