OPTICALLY DETECTED CONDUCTION ELECTRON-SPIN-RESONANCE AND OVERHAUSER SHIFT IN P-GAALAS/GAAS-HETEROSTRUCTURES

被引：19

作者：

KRAPF, M

DENNINGER, G

PASCHER, H

WEIMANN, G

SCHLAPP, W

机构：

[1] UNIV BAYREUTH,BIMF,W-8580 BAYREUTH,GERMANY

[2] TECH UNIV MUNICH,WALTER SCHOTTKY INST,W-8046 GARCHING,GERMANY

[3] FORSCHUNGSINST DBP,W-6100 DARMSTADT,GERMANY

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 74卷 / 10期

关键词：

D O I：

10.1016/0038-1098(90)90727-S

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The spin resonance of the conduction electrons in a single GaAs/GaAlAs heterostructure has been detected by measuring the degree of circular polarization of the luminescence in a microwave magnetic resonance field at 8.4 GHz. The effective g-factor is g* = -047 ± 0.01, slightly different from the bulk value {reversed tilde equals} -0.44. Additionally, the shift of the conduction electron spin resonance frequency due to the polarization of nuclei (Overhauser shift) has been observed for the first time in a single heterostructure. © 1990.

引用

页码：1141 / 1145

页数：5

共 14 条

[1] RELATIVISTIC BAND-STRUCTURE AND SPIN-ORBIT-SPLITTING OF ZINCBLENDE-TYPE SEMICONDUCTORS [J].