FABRICATION OF LOW RESISTIVE CDS THIN-FILMS

被引:9
作者
DAWAR, AL
SHISHODIA, PK
CHAUHAN, G
KUMAR, A
MATHUR, PC
机构
[1] ARSD COLL,DEPT PHYS,NEW DELHI 110021,INDIA
[2] UNIV DELHI,DEPT PHYS & ASTROPHYS,DELHI 110007,INDIA
关键词
D O I
10.1016/0040-6090(91)90147-P
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Low resistive and high mobility thin films of CdS have been grown using vacuum evaporation techniques. X-ray diffraction studies show that the films are well oriented with a preferential growth of crystallites in the (002) plane. The value of conductivity observed in these films is in the range 0.088-OMEGA-1 cm-1-1.34-OMEGA-1 cm-1 at 300 K.
引用
收藏
页码:L1 / L5
页数:5
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