VLSI MATERIALS - A COMPARISON BETWEEN BURIED OXIDE SOI AND SOS

被引：4

作者：

HAMDI, AH ^{[1
]}

MCDANIEL, FD ^{[1
]}

PINIZZOTTO, RF ^{[1
]}

MATTESON, S ^{[1
]}

LAM, HW ^{[1
]}

MALHI, SDS ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 02期

关键词：

D O I：

10.1109/TNS.1983.4332624

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1722 / 1725

页数：4

共 18 条

[1]

BRAGG WH, 1905, PHILOS MAG, V10, pS318

[2]

Carter G., 1976, ION IMPLANTATION SEM

[3]

Chu WK., 1978, BACKSCATTERING SPECT

[4] OPTICAL CHARACTERIZATION OF SILICON AND SAPPHIRE SURFACES AS RELATED TO SOS DISCRETE DEVICE PERFORMANCE [J].

DUFFY, MT ;

ZANZUCCHI, PJ ;

HAM, WE ;

CORBOY, JF ;

CULLEN, GW ;

SMITH, RT .

JOURNAL OF CRYSTAL GROWTH, 1982, 58 (01) :19-36

[5] VLSI MATERIALS - A COMPARISON BETWEEN BURIED OXIDE SOI AND SOS [J].

HAMDI, AH ;

MCDANIEL, FD ;

PINIZZOTTO, RF ;

MATTESON, S ;

LAM, HW ;

MALHI, SDS .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (02) :1722-1725

[6]

HAMDI AH, 1982, UNPUB APPL PHYS 1215

[7]

HAMDI AH, 1982, THESIS N TEXAS STATE

[8] AN INVESTIGATION OF THE PROPERTIES OF AN EPITAXIAL SI LAYER ON A SUBSTRATE WITH A BURIED SIO2 LAYER FORMED BY OXYGEN-ION IMPLANTATION [J].

HOMMA, Y ;

OSHIMA, M ;

HAYASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (06) :890-895

[9] CMOS DEVICES FABRICATED ON BURIED SIO2 LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J].

IZUMI, K ;

DOKEN, M ;

ARIYOSHI, H .

ELECTRONICS LETTERS, 1978, 14 (18) :593-594

[10]

LAM HW, 1982, VLSI ELECTRONICS MIC, V4, pCH1

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