THE NONSTOICHIOMETRY AND THE POINT-DEFECT STRUCTURE OF CUPROUS-OXIDE (CU2-DELTA-O)

被引:58
作者
XUE, J
DIECKMANN, R
机构
[1] Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14852-1501, Bard Hall
关键词
Cuprous oxide; non-stoichiometry; phase diagram; point defects;
D O I
10.1016/0022-3697(90)90003-X
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A thermogravimetric study has been performed on the non-stoichiometry of polycrystalline, large-grained cuprous oxide as a function of oxygen activity at temperatures between 800 and 1200°C. The experimental results are analyzed and discussed with regard to the point defect structure of cuprous oxide in combination with literature data on cation diffusion, anion diffusion and electrical conductivity. From the experimental results for the deviation from stoichiometry it is concluded that at least two types of ionic point defects are present as majority defects in Cu2-δO. © 1990.
引用
收藏
页码:1263 / 1275
页数:13
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