SURFACE BEHAVIOR OF N-MOSE2 PHOTO-ANODES IN PHOTO-ELECTROCHEMICAL SOLAR-CELLS

被引：17

作者：

BICELLI, LP

RAZZINI, G

机构：

来源：

SURFACE TECHNOLOGY | 1982年 / 16卷 / 01期

关键词：

D O I：

10.1016/0376-4583(82)90093-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：37 / 47

页数：11

共 18 条

[1] INFLUENCE OF CRYSTAL-SURFACE ORIENTATION ON REDOX REACTIONS AT SEMICONDUCTING MOS2 [J].

AHMED, SM ;

GERISCHER, H .

ELECTROCHIMICA ACTA, 1979, 24 (06) :705-711

[2]

BICELLI LP, 1981, CHIM IND-MILAN, V63, P172

[3]

BICELLI LP, 1981, FEB COORD M PHOT TRA

[4]

BICELLI LP, 1981, 32ND M INT SOC EL DU, P55

[5] CHANGES IN SURFACE CRYSTALLINITY AND MORPHOLOGY OF CDS AND CDSE PHOTOELECTRODES UPON USE IN POLYSULFIDE ELECTROLYTE [J].

CAHEN, D ;

VAINAS, B ;

VANDENBERG, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1484-1488

[6]

FARRAGHER AL, 1972, 5TH P INT C CAT, P1301

[7]

GERISCHER H, 1977, P S ELECTRIC MATERIA, P8

[8] PHOTOELECTROCHEMICAL REACTIONS AND FORMATION OF INVERSION-LAYERS AT NORMAL-TYPE MOS2-ELECTRODES, MOSE2-ELECTRODES, AND WSE2-ELECTRODES IN APROTIC-SOLVENTS [J].

KAUTEK, W ;

GERISCHER, H .

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1980, 84 (07) :645-653

[9] THE ROLE OF CARRIER DIFFUSION AND INDIRECT OPTICAL-TRANSITIONS IN THE PHOTOELECTROCHEMICAL BEHAVIOR OF LAYER TYPE D-BAND SEMICONDUCTORS [J].

KAUTEK, W ;

GERISCHER, H ;

TRIBUTSCH, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) :2471-2478

[10] THE APPLICABILITY OF SEMICONDUCTING LAYERED MATERIALS FOR ELECTROCHEMICAL SOLAR-ENERGY CONVERSION [J].

KAUTEK, W ;

GOBRECHT, J ;

GERISCHER, H .

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1980, 84 (10) :1034-1040

← 1 2 →