SWIRL DEFECTS IN FLOAT-ZONED SILICON-CRYSTALS

被引：44

作者：

ABE, T ^{[1
]}

HARADA, H ^{[1
]}

CHIKAWA, J ^{[1
]}

机构：

[1] NHK, BROADCASTING SCI RES LABS, SETAGAYA KU, TOKYO 157, JAPAN

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90241-3

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：139 / 147

页数：9

共 28 条

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[2]

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[3] TEM OBSERVATION OF DISLOCATION LOOPS CORRELATED WITH INDIVIDUAL SWIRL DEFECTS IN AS-GROWN SILICON [J].

BERNEWITZ, LI ;

KOLBESEN, BO ;

MAYER, KR ;

SCHUH, GE .

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[4] MELTING OF SILICON-CRYSTALS AND A POSSIBLE ORIGIN OF SWIRL DEFECTS [J].

CHIKAWA, J ;

SHIRAI, S .

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[5]

CHIKAWA J, 1979, JAPAN J APPL PHY S18, V18, P153

[6]

Chikawa J.-I., 1981, Defects in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P317

[7] NEW X-RAY TOPOGRAPHIC TECHNIQUE FOR DETECTION OF SMALL DEFECTS IN HIGHLY PERFECT CRYSTALS [J].

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ASAEDA, Y ;

FUJIMOTO, I .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) :1922-&

[8] EFFECT OF GROWTH PARAMETERS ON FORMATION AND ELIMINATION OF VACANCY CLUSTERS IN DISLOCATION-FREE SILICON-CRYSTALS [J].

DEKOCK, AJR ;

ROKSNOER, PJ ;

BOONEN, PGT .

JOURNAL OF CRYSTAL GROWTH, 1974, 22 (04) :311-320

[9] INTRODUCTION OF DISLOCATIONS DURING GROWTH OF FLOATING-ZONE SILICON-CRYSTALS AS A RESULT OF POINT-DEFECT CONDENSATION [J].

DEKOCK, AJR ;

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[10]

DEKOCK AJR, 1973, PHILIPS RES REPT S, V1

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