ATOMISTIC GROWTH MECHANISMS FOR THE MOLECULAR-BEAM EPITAXY OF A MODEL SYSTEM

被引:14
作者
PAIK, SM
DASSARMA, S
机构
关键词
D O I
10.1103/PhysRevB.39.9793
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:9793 / 9796
页数:4
相关论文
共 29 条
[1]   Granulation, Phase Change, and Microstructure - Kinetics of Phase Change. III [J].
Avrami, M .
JOURNAL OF CHEMICAL PHYSICS, 1941, 9 (02) :177-184
[2]   Kinetics of phase change I - General theory [J].
Avrami, M .
JOURNAL OF CHEMICAL PHYSICS, 1939, 7 (12) :1103-1112
[3]  
Avrami M., 1940, J CHEM PHYS, V8, P212, DOI DOI 10.1063/1.1750631
[4]   ORIGIN OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING MOLECULAR-BEAM EPITAXY - A COMPUTATIONAL MODELING APPROACH [J].
CLARKE, S ;
VVEDENSKY, DD .
PHYSICAL REVIEW LETTERS, 1987, 58 (21) :2235-2238
[5]   ATOMISTIC NUMERICAL-SIMULATION OF EPITAXIAL CRYSTAL-GROWTH [J].
DASSARMA, S ;
PAIK, SM ;
KHOR, KE ;
KOBAYASHI, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1179-1183
[6]   MOLECULAR-DYNAMICS SIMULATION OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF THE SILICON (100) SURFACE [J].
GAWLINSKI, ET ;
GUNTON, JD .
PHYSICAL REVIEW B, 1987, 36 (09) :4774-4781
[7]   ROLE OF SURFACE MOLECULAR REACTIONS IN INFLUENCING THE GROWTH-MECHANISM AND THE NATURE OF NONEQUILIBRIUM SURFACES - A MONTE-CARLO STUDY OF MOLECULAR-BEAM EPITAXY [J].
GHAISAS, SV ;
MADHUKAR, A .
PHYSICAL REVIEW LETTERS, 1986, 56 (10) :1066-1069
[8]   TRANSIENTS IN THE RATE OF CRYSTAL-GROWTH [J].
GILMER, GH .
JOURNAL OF CRYSTAL GROWTH, 1980, 49 (03) :465-474
[9]   QUANTITATIVE-EVALUATION OF RANDOM DISTRIBUTED STEPS AT INTERFACES AND SURFACES [J].
HENZLER, M .
SURFACE SCIENCE, 1978, 73 (01) :240-251
[10]   RHEED STUDIES OF HETEROJUNCTION AND QUANTUM-WELL FORMATION DURING MBE GROWTH - FROM MULTIPLE-SCATTERING TO BAND OFFSETS [J].
JOYCE, BA ;
DOBSON, PJ ;
NEAVE, JH ;
WOODBRIDGE, K ;
ZHANG, J ;
LARSEN, PK ;
BOLGER, B .
SURFACE SCIENCE, 1986, 168 (1-3) :423-438