DEEP LEVELS OF ZN-DOPED P-GASE

被引：11

作者：

SHIGETOMI, S

IKARI, T

NAKASHIMA, H

NISHIMURA, H

机构：

[1] MIYAZAKI UNIV,DEPT ELECTR ENGN,MIYAZAKI 8892,JAPAN

[2] KUYUSHU UNIV,DEPT ELECT ENGN,HIGASHI KU,HAKOZAKI 812,JAPAN

[3] FUKUOKA UNIV,FAC SCI,DEPT APPL SCI,ZYONAN KU,FUKUOKA 81401,JAPAN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 128卷 / 02期

关键词：

D O I：

10.1002/pssa.2211280238

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K95 / K98

页数：4

共 8 条

[1] KINETICS OF RADIATIVE RECOMBINATIONS IN GASE AND INFLUENCE OF CU DOPING ON THE LUMINESCENCE SPECTRA [J].

CAPOZZI, V .

PHYSICAL REVIEW B, 1983, 28 (08) :4620-4627

[2] PHOTO-LUMINESCENCE PROPERTIES OF CU-DOPED GASE [J].

CAPOZZI, V ;

MINAFRA, A .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (29) :4335-4346

[3] PHOTOLUMINESCENCE OF MN-DOPED, CR-DOPED AND UNDOPED EPSILON-GASE [J].

CHUNG, CH ;

HAHN, SR ;

PARK, HL ;

KIM, WT ;

LEE, SI .

JOURNAL OF LUMINESCENCE, 1988, 40-1 :405-406

[4] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[5] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022

[6] OPTICAL-PROPERTIES OF GASE-MN SINGLE-CRYSTALS [J].

LEE, SI ;

HAHN, SR ;

CHUNG, CH ;

YUN, SH ;

KIM, WT .

SOLID STATE COMMUNICATIONS, 1986, 60 (05) :453-456

[7] DEEP HOLE TRAPS IN P-TYPE GASE SINGLE-CRYSTALS [J].

MANFREDOTTI, C ;

MURRI, R ;

RIZZO, A ;

GALASSINI, S ;

RUGGIERO, L .

PHYSICAL REVIEW B, 1974, 10 (08) :3387-3393

[8]

SCHMID PH, 1971, PHYS STATUS SOLIDI A, V21, P443

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