Infrared dielectric constant of cubic SiC

被引：16

作者：

Moore, WJ ^{[1
]}

Holm, RT ^{[1
]}

Yang, MJ ^{[1
]}

Freitas, JA ^{[1
]}

机构：

[1] SACHS FREEMAN ASSOCIATES INC,LANDOVER,MD 20785

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 12期

关键词：

D O I：

10.1063/1.360438

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The real dielectric constant for chemical vapor deposition 3C-SiC grown on silicon (Si) has been determined at 300 K and at 5 K from an analytic fit to interference fringes in transmission over the spectral range from the near infrared to the submillimeter region. This technique is capable of high accuracy being limited typically by the sample thickness and accuracy with which the thickness is measured. The resulting real dielectric constant is lower than the values usually attributed to this material. We find: at 300 K epsilon(0)=952 and epsilon(infinity)=6.38; at 5 K epsilon(0)=9.28 and epsilon(infinity)=6.22. In all cases the estimated error is +/-0.8%. The observed ratio epsilon(0)/epsilon(infinity) agrees with the Lyddane-Sachs-Teller relation to 0.1% at 300 K and 0.2% at 5 K. (C) 1995 American Institute of Physics.

引用

页码：7255 / 7258

页数：4