ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON

被引：275

作者：

FLITSCH, R ^{[1
]}

RAIDER, SI ^{[1
]}

机构：

[1] IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1975年 / 12卷 / 01期

关键词：

D O I：

10.1116/1.568771

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：305 / 308

页数：4

共 11 条

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FLITSCH R, TO BE PUBLISHED

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[9] ATTENUATION OF LOW-ENERGY ELECTRONS BY SOLIDS - RESULTS FROM X-RAY PHOTOELECTRON SPECTROSCOPY [J].

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[10] ESCAPE LENGTH OF AUGER ELECTRONS [J].

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