UBER KRISTALLSTRUKTUR + ELEKTRISCHE EIGENSCHAFTEN DER WISMUTSELENIDE BI2SE2 + BI2SE3

被引：46

作者：

GOBRECHT, H

PANTZER, G

BOETERS, KE

机构：

来源：

ZEITSCHRIFT FUR PHYSIK | 1964年 / 177卷 / 01期

关键词：

D O I：

10.1007/BF01375404

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：68 / &

共 34 条

[1]

Abrikosov N.Kh., 1960, RUSS J INORG CHEM+, V5, P978

[2] EFFECTS OF DOPING ADDITIONS ON THERMOELECTRIC PROPERTIES OF INTRINSIC SEMICONDUCTOR BI2TE21SE09 [J].

BENNETT, LC ;

WIESE, JR .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) :562-&

[3] ELECTRICAL AND OPTICAL PROPERTIES OF SOME M2V-BN3VI-B SEMICONDUCTORS [J].

BLACK, J ;

CONWELL, EM ;

SEIGLE, L ;

SPENCER, CW .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 2 (03) :240-251

[4] APPARATUS FOR MEASURING RESISTIVITY AND HALL COEFFICIENT OF SEMICONDUCTORS [J].

DAUPHINEE, TM ;

MOOSER, E .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1955, 26 (07) :660-664

[5] UBER CHALKOGENOHALOGENIDE DES DREIWERTIGEN ANTIMONS UND WISMUTS .3. UBER TELLUROHALOGENIDE DES DREIWERTIGEN ANTIMONS UND WISMUTS UND UBER ANTIMON-TELLURID UND WISMUT(III)-TELLURID UND WISMUT(III)-SELENID [J].

DONGES, E .

ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1951, 265 (1-3) :56-61

[6] CHEMICAL BONDING IN BISMUTH TELLURIDE [J].

DRABBLE, JR ;

GOODMAN, CHL .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) :142-144

[7] STRUCTURE-CELL DATA AND EXPANSION COEFFICIENTS OF BISMUTH TELLURIDE [J].

FRANCOMBE, MH .

BRITISH JOURNAL OF APPLIED PHYSICS, 1958, 9 (10) :415-417

[8]

Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[9]

Harker D, 1934, Z KRISTALLOGR, V89, P175

[10] GALVANOMAGNETIC EFFECTS IN BISMUTH SELENIDE BI2 SE3 [J].

HASHIMOTO, K .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1961, 16 (10) :1970-&

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